| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| XJNG2103 |
|
MOS(场效应管) |
NCE/新洁能 |
SOP8 |
2130+ |
6734 |
||
| IPW65R041CFD | IC |
INFINEON/英飞凌 |
TO-247 |
20+ |
145 |
|||
| TMS320F28335PTPQ | IC |
TI/德州仪器 |
LQFP176 |
22+ |
2240 |
|||
| LMH6645MFX/NOPB | IC |
TI/德州仪器 |
SOT-23-5 |
2137+ |
15000 |
|||
| PMEG060V050EPD | IC |
NEXPERIA/安世 |
SOT-1289 |
21+ |
60000 |
|||
| PMBT4403 | IC |
NEXPERIA/安世 |
SOT-23-3 |
2435+ |
12000 |
|||
| SC2462SO | 霍尔、电流（压）传感器 |
SEMIMENT/赛卓 |
SOT23 |
25+ |
27000 |
|||
| ABS210 | MOS(场效应管) |
DY/迪一电子 |
SOP4 |
2031+ |
75850 |
|||
| ES1J | MOS(场效应管) |
DY/迪一电子 |
SMA |
2111+ |
10000 |
|||
| MB10S | MOS(场效应管) |
DY/迪一电子 |
SOP4 |
2104+ |
48000 |
|||
| MB10F | MOS(场效应管) |
DY/迪一电子 |
MBF |
2128+ |
30000 |
|||
| RS1M | MOS(场效应管) |
SMA |
13+ |
10000 |
||||
| STM32F071CBT6 | IC |
ST/意法 |
LQFP48 |
22+ |
2267 |
|||
| MAX3232CDR | IC |
TI/德州仪器 |
SOP16 |
1905+ |
2500 |
|||
| LM258P | MOS(场效应管) |
TI/德州仪器 |
DIP-8 |
12+ |
8 |
|||
| MSK5232-1.5HG | 稳幅管 |
MSK |
TO-257 |
1007+ |
4 |
|||
| MSK5130-00BZU | 稳幅管 |
MSK |
NO-TAB |
1335+ |
14 |
|||
| NCEP063N10GU | MOS(场效应管) |
NCE/新洁能 |
DFN5*6 |
19+ |
18 |
|||
| BUK6D81-80E | IC |
NEXPERIA/安世 |
SOT1220 |
21+ |
21000 |
|||
| PMV88ENEAR | 二极管 |
NEXPERIA/安世 |
SOT23-3 |
1943+ |
9000 |
|||
| HSMS-2815-TR1 | MOS(场效应管) |
AGILENT/安捷伦 |
SOT-323 |
1212+ |
507 |
|||
| IRFS7437TRLPBF | IC |
INFINEON/英飞凌 |
TO263 |
21+ |
20000 |
|||
| HPIXP2350AE | IC |
INTEL/英特尔 |
FCBGA-1752 |
0917+ |
1 |
|||
| OMAP1621BZZG | 其他IC |
TI/德州仪器 |
BGA-289 |
08+ |
250 |
|||
| 74ALVCH32973ZKER | IC |
TI/德州仪器 |
PBGA96 |
09+ |
4 |
|||
| IRF7314 | MOS(场效应管) |
INFINEON/英飞凌 |
SO-8 |
15+ |
300 |
|||
| AD8347ARUZ | 其他IC |
ADI/亚德诺 |
TSSOP-28 |
1310+ |
119 |
|||
| JANTX2N6193 | IC |
MICROSEMI/美高森美 |
TO-39 |
12+ |
105 |
|||
| VND5E025AKTR-E | IC |
ST/意法 |
SSOP24 |
20+ |
4000 |
|||
| 24AA02E48T-I/OT | IC |
MICROCHIP/微芯 |
SOT23-5 |
22+ |
9000 |