| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| 24AA02E48T-I/OT | IC |
MICRCOHIP微芯 |
SOT23-5 |
22+ |
9000 |
|||
| LM5175QPWPTQ1 | IC |
TI/德州仪器 |
HTSSOP48 |
21+ |
7750 |
|||
| ISO7641FMDWR | IC |
TI/德州仪器 |
SOP16 |
21+22+ |
20000 |
|||
| UCC38C44DR | IC |
TI/德州仪器 |
SOP8 |
22+ |
8845 |
|||
| UC33063AG-S08-R |
|
MOS(场效应管) |
UTC/友顺 |
SOP-8 |
2150+ |
47500 |
||
| MIC4451BM |
|
MOS(场效应管) |
MICREL/麦瑞 |
SOP-8 |
0623+ |
4251 |
||
| NCE3010S |
|
MOS(场效应管) |
NCE/新洁能 |
SOP8 |
2050+ |
30000 |
||
| IKW40N65H5 |
|
IC |
INFINEON/英飞凌 |
TO247 |
1752+ |
7361 |
||
| TDA7265L-J11-A-T |
|
IC |
UTC/友顺 |
HZIP-11A |
2120+ |
10000 |
||
| RS3221-3.0YF3 | IC |
RUNIC/润石 |
SOT-23-3 |
21+ |
6000 |
|||
| SN65C1168ERGYR | IC |
TI/德州仪器 |
QFN16 |
21+ |
8481 |
|||
| WS2293A | IC |
WINSEMI/稳先微 |
SOT23-6 |
23+ |
17470 |
|||
| LMK04808BISQ | MOS(场效应管) |
TI/德州仪器 |
QFN-64 |
1325+ |
25 |
|||
| CGH40006P | MOS(场效应管) |
Wolfspeed |
SMD |
13+ |
7 |
|||
| SAFFB942MAN0F0AR15 | MOS(场效应管) |
MURATA/村田 |
SMD |
15+ |
4700 |
|||
| MC74HC04ADR2G | MOS(场效应管) |
ONSEMI/安森美 |
SOP14 |
1820+ |
2500 |
|||
| RT8208FGQW | MOS(场效应管) |
立琦 |
QFN16 |
15+ |
195 |
|||
| MCR10FZPF1503 | MOS(场效应管) |
ROHM/罗姆 |
0805 |
20+ |
35700 |
|||
| MCR03FZPFX3653 | MOS(场效应管) |
ROHM/罗姆 |
0603 |
16+ |
21652 |
|||
| SS215L | MOS(场效应管) |
TSC/台湾半导体 |
SUBSMA |
2038+ |
20000 |
|||
| LM1458MX | MOS(场效应管) |
NS/美国国半 |
SOP-8 |
14+ |
193 |
|||
| STM32F071CBT6 | IC |
ST/意法 |
LQFP48 |
22+ |
2267 |
|||
| MAX3232CDR | IC |
TI/德州仪器 |
SOP16 |
1905+ |
2500 |
|||
| MB10S |
|
MOS(场效应管) |
迪一 |
SOP4 |
2104+ |
48000 |
||
| ES1J | MOS(场效应管) |
迪一 |
SMA |
2111+ |
10000 |
|||
| SC2462SO | 霍尔、电流（压）传感器 |
SEMIMENT/赛卓 |
SOT23 |
24+ |
27000 |
|||
| RS1M |
|
MOS(场效应管) |
迪一 |
SMA |
2115+ |
10000 |
||
| MB10F |
|
MOS(场效应管) |
迪一 |
MBF |
2128+ |
30000 |
||
| LM258P | MOS(场效应管) |
TI/德州仪器 |
DIP-8 |
12+ |
8 |
|||
| MSK5232-1.5HG | 稳幅管 |
MSK |
TO-257 |
1007+ |
4 |