| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| ET1100-0000-0250 | IC |
BECKHOFF |
BGA |
21+ |
5000 |
|||
| IRFS7534TRLPBF | IC |
INFINEON/英飞凌 |
TO263 |
2116+ |
800 |
|||
| THVD1450DRBR | IC |
TI/德州仪器 |
VSON-8 |
2026+5 |
1775 |
|||
| NCP3337MN330R2G | IC |
ONSEMI/安森美 |
DFN10 |
21+ |
2850 |
|||
| NCE1540KA |
|
MOS(场效应管) |
NCE/新洁能 |
TO252 |
2124+ |
18055 |
||
| DB107S |
|
MOS(场效应管) |
迪一 |
SOP4 |
2107+ |
150000 |
||
| NCE6050KA |
|
MOS(场效应管) |
NCE/新洁能 |
TO-252 |
2130+ |
30000 |
||
| MIC4421YM | MOS(场效应管) |
MICROCHIP/微芯 |
SOP-8 |
11+ |
2189 |
|||
| IPW65R041CFD | IC |
INFINEON/英飞凌 |
TO-247 |
19+ |
430 |
|||
| MT29F2G16ABAEAWP-AIT:E | IC |
MICRON/美光 |
TSOP48 |
21+ |
2000 |
|||
| 5M240ZT100A5N | IC |
ALTERA/阿尔特拉 |
QFP100 |
19+ |
155 |
|||
| NCE3416 |
|
MOS(场效应管) |
NCE/新洁能 |
SOT23 |
2120+ |
99000 |
||
| DB207S |
|
MOS(场效应管) |
迪一 |
SOP4 |
2036+ |
250500 |
||
| STD25NF20 |
|
MOS(场效应管) |
ST/意法 |
TO252 |
22+ |
5000 |
||
| IXFH46N65X2 | IC |
IXYS/艾赛斯 |
TO247 |
21+ |
251 |
|||
| TPSMB33AHE3_A/H | IC |
VISHAY/威世 |
SMB |
2030+ |
8048 |
|||
| TMS320F28335PTPQ | IC |
TI/德州仪器 |
LQFP176 |
22+ |
3200 |
|||
| UC2843AD8TR | IC |
TI/德州仪器 |
SOP8 |
23+ |
2500 |
|||
| NCE65T360F |
|
N沟道MOS管 |
NCE/新洁能 |
TO-220F |
21+ |
5000 |
||
| SI8235BD-D-ISR | IC |
SILICON/芯科 |
SOP16 |
21+ |
5000 |
|||
| ACS8520 | MOS(场效应管) |
SEMTECH/升特 |
LQFP100 |
0647+ |
24 |
|||
| LCMXO2-2000UHC-4FG484C | IC |
LATTICE/莱迪斯 |
BGA-484 |
1333+ |
5 |
|||
| XJNG2103 |
|
MOS(场效应管) |
NCE/新洁能 |
SOP8 |
2130+ |
423 |
||
| TMS320C6416TBGLZA6 | IC |
TI/德州仪器 |
FCBGA-532 |
1310+ |
6 |
|||
| LTR28S12F | 模块 |
新雷能 |
DIP |
1109 |
6 |
|||
| GCM1555C1H1R8CZ01J | MOS(场效应管) |
MURATA/村田 |
0402 |
18+ |
48093 |
|||
| STM32F071CBT6 | IC |
ST/意法 |
LQFP48 |
22+ |
2267 |
|||
| MAX3232CDR | IC |
TI/德州仪器 |
SOP16 |
1905+ |
2500 |
|||
| MB10S |
|
MOS(场效应管) |
迪一 |
SOP4 |
2104+ |
48000 |
||
| ES1J | MOS(场效应管) |
迪一 |
SMA |
2111+ |
10000 |