| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| M7 | MOS(场效应管) |
大拓 |
SMA |
2125+ |
500000 |
|||
| AD9763ASTZ | MOS(场效应管) |
ADI/亚德诺 |
LQFP48 |
13+ |
20 |
|||
| NCE3018AS | MOS(场效应管) |
NCE/新洁能 |
SOP-8 |
19+ |
20 |
|||
| ADG507AKPZ | MOS(场效应管) |
ADI/亚德诺 |
PLCC |
12+ |
214 |
|||
| SMAB16-RTK/P | MOS(场效应管) |
KEC/开益禧 |
SMA |
1534+ |
1900 |
|||
| FM14C88-SG | MOS(场效应管) |
RAMTRON |
SOP28 |
1018+ |
23 |
|||
| LM324DT | IC |
ST/意法 |
SOP14 |
2135+ |
7500 |
|||
| MIC4421YM | MOS(场效应管) |
MICROCHIP/微芯 |
SOP-8 |
11+ |
2189 |
|||
| SC2462SO | 霍尔、电流（压）传感器 |
SEMIMENT/赛卓 |
SOT23 |
24+ |
27000 |
|||
| STM32F071CBT6 | IC |
ST/意法 |
LQFP48 |
22+ |
2267 |
|||
| MAX3232CDR | IC |
TI/德州仪器 |
SOP16 |
1905+ |
2500 |
|||
| MB10S |
|
MOS(场效应管) |
迪一 |
SOP4 |
2104+ |
48000 |
||
| ES1J | MOS(场效应管) |
迪一 |
SMA |
2111+ |
10000 |
|||
| TMPM370FYFG | IC |
TOSHIBA/东芝 |
LQFP100 |
2111+ |
158 |
|||
| RS1M |
|
MOS(场效应管) |
迪一 |
SMA |
2115+ |
10000 |
||
| MB10F |
|
MOS(场效应管) |
迪一 |
MBF |
2128+ |
30000 |
||
| LM258P | MOS(场效应管) |
TI/德州仪器 |
DIP-8 |
12+ |
8 |
|||
| MSK5232-1.5HG | 稳幅管 |
MSK |
TO-257 |
1007+ |
4 |
|||
| MSK5130-00BZU | 稳幅管 |
MSK |
NO-TAB |
1335+ |
14 |
|||
| NCEP063N10GU | MOS(场效应管) |
NCE/新洁能 |
DFN5*6 |
19+ |
18 |
|||
| TLE4928 | MOS(场效应管) |
INFINESO |
PG-SSO-3 |
16+ |
347 |
|||
| ABS210 |
|
MOS(场效应管) |
迪一 |
SOP4 |
2031+ |
75850 |
||
| ACS8520 | MOS(场效应管) |
SEMTECH/升特 |
LQFP100 |
0647+ |
24 |
|||
| LCMXO2-2000UHC-4FG484C | IC |
LATTICE/莱迪斯 |
BGA-484 |
1333+ |
5 |
|||
| XJNG2103 |
|
MOS(场效应管) |
NCE/新洁能 |
SOP8 |
2130+ |
423 |
||
| TMS320C6416TBGLZA6 | IC |
TI/德州仪器 |
FCBGA-532 |
1310+ |
6 |
|||
| LTR28S12F | 模块 |
新雷能 |
DIP |
1109 |
6 |
|||
| GCM1555C1H1R8CZ01J | MOS(场效应管) |
MURATA/村田 |
0402 |
18+ |
48093 |
|||
| STD25NF20 |
|
MOS(场效应管) |
ST/意法 |
TO252 |
22+ |
5000 |
||
| IXFH46N65X2 | IC |
IXYS/艾赛斯 |
TO247 |
21+ |
251 |