| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| RS3221-3.0YF3 | IC |
RUNIC/润石 |
SOT-23-3 |
21+ |
6000 |
|||
| SN65C1168ERGYR | IC |
TI/德州仪器 |
QFN16 |
21+ |
8481 |
|||
| NCE3010S |
|
MOS(场效应管) |
NCE/新洁能 |
SOP8 |
2050+ |
30000 |
||
| IKW40N65H5 |
|
IC |
INFINEON/英飞凌 |
TO247 |
1752+ |
7361 |
||
| TDA7265L-J11-A-T |
|
IC |
UTC/友顺 |
HZIP-11A |
2120+ |
10000 |
||
| MIC4451BM |
|
MOS(场效应管) |
MICREL/麦瑞 |
SOP-8 |
0623+ |
4251 |
||
| LMK04808BISQ | MOS(场效应管) |
TI/德州仪器 |
QFN-64 |
1325+ |
25 |
|||
| CGH40006P | MOS(场效应管) |
Wolfspeed |
SMD |
13+ |
7 |
|||
| SAFFB942MAN0F0AR15 | MOS(场效应管) |
MURATA/村田 |
SMD |
15+ |
4700 |
|||
| MC74HC04ADR2G | MOS(场效应管) |
ONSEMI/安森美 |
SOP14 |
1820+ |
2500 |
|||
| RT8208FGQW | MOS(场效应管) |
立琦 |
QFN16 |
15+ |
195 |
|||
| MCR10FZPF1503 | MOS(场效应管) |
ROHM/罗姆 |
0805 |
20+ |
35700 |
|||
| MCR03FZPFX3653 | MOS(场效应管) |
ROHM/罗姆 |
0603 |
16+ |
21652 |
|||
| SS215L | MOS(场效应管) |
TSC/台湾半导体 |
SUBSMA |
2038+ |
20000 |
|||
| LM1458MX | MOS(场效应管) |
NS/美国国半 |
SOP-8 |
14+ |
193 |
|||
| SC2462SO | 霍尔、电流（压）传感器 |
SEMIMENT/赛卓 |
SOT23 |
25+ |
27000 |
|||
| ES1J | MOS(场效应管) |
DY/迪一电子 |
SMA |
2111+ |
10000 |
|||
| ABS210 | MOS(场效应管) |
DY/迪一电子 |
SOP4 |
2031+ |
75850 |
|||
| MB10S | MOS(场效应管) |
DY/迪一电子 |
SOP4 |
2104+ |
48000 |
|||
| MB10F | MOS(场效应管) |
DY/迪一电子 |
MBF |
2128+ |
30000 |
|||
| BUK6D81-80E | IC |
NEXPERIA/安世 |
SOT1220 |
21+ |
21000 |
|||
| PMV88ENEAR | 二极管 |
NEXPERIA/安世 |
SOT23-3 |
1943+ |
9000 |
|||
| STM32F071CBT6 | IC |
ST/意法 |
LQFP48 |
22+ |
2267 |
|||
| MAX3232CDR | IC |
TI/德州仪器 |
SOP16 |
1905+ |
2500 |
|||
| LM258P | MOS(场效应管) |
TI/德州仪器 |
DIP-8 |
12+ |
8 |
|||
| MSK5232-1.5HG | 稳幅管 |
MSK |
TO-257 |
1007+ |
4 |
|||
| MSK5130-00BZU | 稳幅管 |
MSK |
NO-TAB |
1335+ |
14 |
|||
| NCEP063N10GU | MOS(场效应管) |
NCE/新洁能 |
DFN5*6 |
19+ |
18 |
|||
| RS1M | MOS(场效应管) |
SMA |
13+ |
10000 |
||||
| MT29F2G16ABAEAWP-AIT:E | IC |
MICRON/美光 |
TSOP48 |
21+ |
2000 |